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w headphone equipment 3V use).
at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo
dual OCL power a mplifier, and a ripple filter.
STEREO HEADPHONE AMPLIFIER aS
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Silicore
3V USE(c)
Outline Drawing
D2002
It is built in dual auto -reverse prea mp lifier,
FEATURE
Power a mpl ifier stage OCL (Outpu t Condenser-Less). Low noise : Vno=22 Vr ms (Typ.) Excellent (Typ.) Voltage gain : Gv=2 7dB (Typ.) Built-in a power a mplifier mute. ripple rejection ratio :RR=62dB
Built-in input capacitor for reducing buzz noise. Prea mplifier stage
Auto-reverse with F/R control switch. Input coupling condenser-less Low noise : Vni=1.3 Vr ms (Typ.) Built-in a prea mp lifier mu te.
Built-in in put capacitor for reducing buzz noise. Total
Built-in a ripple filter. Built-in a power switch. Low quiescent current : ICCQ=11.5mA(Typ.) (Vcc=3V, Ta=25C) Operating supply voltage rang e: Vcc(opr)=1.8~4.5V(Ta=25C)
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BLOCK DIAGRAM
D2002
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TERMINAL EXPLANATION
D2002
Terminal voltage: typical terminal voltage at no signal with test circuit (Vcc=3V, Ta=25C) Ter minal NO. 1 2 3 22 23 4 21 5 Na me Pre GN D INA-F INA-R INB-R INB-F NFA NFB PRE OUTA Output of prea mplifier 20 6 19 11 14 PRE OUTB PW INA Input of power amplifier PW IN B OUTA Output of po wer amplifier OUTB 1.3 1.3 1.3 NF of preamplifier 1.3 Ter minal Voltage (V) 0
Function The GND, except the power drive stage. Input of preamplifier. F/R SW (OPE N: "L" :
Internal circuit -

2 / 23 PIN 3 / 22 PIN)
1.3
7
RF IN
Ripple filter terminal
2.6
8
PW SW
Power on/off switch. (Vcc : power on Open or GND: power off) Muting switch for power a mplifier. (Vcc : power amp. On Open or GND: power amp. Off) SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
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9
PW MUTE
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TERMINAL EXPLANATION
D2002
Terminal voltage: typical terminal voltage at no signal with test circuit (Vcc=3V, Ta=25C) Ter minal NO. Na me Ter minal Voltage (V)
Function Forward/Reverse mode switch. (OPEN : Forward mode "L" level : Reverse mo de u This terminal can't be connected with GND line directly. In case of reverse mode, a resistor (R=180k~270k) should be connected to GND GND for power drive stage
Internal circuit
10
F/R SW
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12
PW GND
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0
13
OUTc
Output terminal of center power a mplifier.
1.3
15 16
Vcc BASE
Base of an external PNP transistor fo r ripple filter. Ripple filter output. Ripple filter circuit supplies internal circuit ex cept power a mplifier circuit with power source. Muting switch for preamp lifier. (V1 7 (RF O UT) : Preamp. Off OPEN : Prea mp . On ) u This terminal can't be connected with GND line directly. In case that terminal is connected with GND line, a resistor (R Y 1 0 k) should be connected to GND.
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3 2.3
17
RF OUT
2.6
18
PRE SW
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24
VREF
Reference voltage. Prea mp lifier and power a mplifier operate on this reference.
1.3
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AN EXAMPLE OF PATTERN LAYOUT
D2002
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Characteristic Supply Vo ltage Output Current Power Diss ipation Operating Te mperature Storage Temp erature Power Ripple Filter Symbol Vcc Io(peak) IRF PD(note) Topr Tstg Value 6 60 30 400 -25~75 -55~150 Unit V mA mW C C
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(Note) Derated above Ta=25C in the proportion of 3.2 mW/C. SHAOXING SILICORE TECHNOLOGY CO.,LTD www. Silicore. com. cn
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ELECTRICAL CHARACTERISTICS
Preamplifier stage: Rg=2.2k, RL=10k, SW2: OPEN SW4: ON/OPEN, SW5: a/b, SW6: a Power amplifier stage: Rg=600, RL=16, SW3: ON SW7: a)
D2002
( U n l e s s o t h e r w i s e s p e c i f i e d : Ta = 2 5 C , V c c = 3 V; f = 1 k H z , S W 1 : a , S W 2 : a , S W 3 : O P E N S W 8 : O N
Characteristics Quiescent Current Voltage Gain Power amplifier stage Channel Balance Output Power Total Harmonic Distortion Output Noise Vo ltage Ripple Rejection Ratio Cross Talk (CH-A/CH-B) Power Muting Attenuation Open Loop Vo ltage Gain Closed Loop Voltage Gain Preamplifier stage Maximu m Output Voltage Total Harmonic Distortion Equivalent Voltage Input Noise
Symbol ICC Q 1 ICC Q 2 ICC Q 3 Gv CB Po 1 Po 2 THD1 Vno RR1 CT1 ATT1 Gvo Gvc Vo m THD2 Vni CT2 CT3 ATT2 VRF of On Off Off On RR2 I8 V8 I9 V9
Test conditions
P o w e r o ff , S W 1 : b S W 2 : b SW3: ON P o w e r a m p . O ff , S w 2 : b Vi n = 0 Vo = - 1 2 d B V RL=16 RL=32
Min
Typ
Max 5
Unit A mA dB mW
5 11 .5 25 35 27 0 50 33 0.2 22 45 35 70 600 62 42 80 80 35 850 0.02 1.3 70
9 16.5 29 1.5
THD=10% Po=1mW
0.8 40
% Vr ms dB
Rg=600, SW7: b f r = 1 0 0 H z , Vr = - 2 2 d B V SW8:OPEN Vo = - 1 2 d B V Vo = - 1 2 d B V, S W 2 : a b Vo = - 1 2 d B V, S W 6 : b Vo = - 1 2 d B V THD=1% Vo = - 1 2 d B V Rg=2.2k, SW5 : c BPF=20Hz~20kHz NAB(Gv=35dB, f=1kHz) Vo = - 1 2 d B V Vo = - 1 2 d B V, SW3: OPENON V c c = 2 V, I R F = 0 m A V c c = 2 V, IRF=10mA fr=100Hz, Vr = - 2 2 d B V SW8 :OPEN V c c = 1 . 8 V, V 2 4 Y V c c = 1 . 8 V, V 2 4 U V c c = 1 . 8 V, AT T 1 U V c c = 1 . 8 V, AT T 1 Y 0.5V 0.3V 3dB 60dB
dB mVr ms 0.1 2.8 % Vr ms
Cross Talk (CH-A/CH-B) Cross Talk (Forward/Reverse) Pre Muting Attenuation
70 80 1.76 45 5 0 5 0 0.3 0.3 1.8 53
dB
Ripple Filter Output Vo ltage Ripple Rejection Ratio Ripple Filter Output Power On/off Switch Power A mp . Mute Switch Power Current Power Vo ltage Mute Current Mute Vo ltage
V dB A V A V
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TEST CIRCUIT
D2002
u
Monolithic ceramic condenser
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APPLICATION CIRCUIT
D2002
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Monolithic ceramic condenser
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CHARACTERISTICS CURVES
Unless otherwise specified: Vcc=3V, f=1kHz, Ta=25C RL=16, prea mp lifier stage : Rg=2.2k, RL=10k
D2002
Power a mplifier stage : Rg=6 00 ,
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D2002
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D2002
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D2002
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